1 cghv14800 800 w, 1200 - 1400 mhz, 50 v, gan hemt for l-band radar systems crees cghv14800 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally with high effciency, high gain and wide bandwidth capabilities, which makes the cghv14800 ideal for 1.2 - 1.4 ghz pulsed l-band radar amplifer applications, such as air traffc control (atc) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. the gan hemt typically operates at 50 v, typically deliverying >65% drain effciency. the package options are ceramic/metal fange package. re v 0.2 C ju ne 2016 - pr e liminar y features ? reference design amplifer 1.2 - 1.4 ghz operation ? 800 w minimum output power ? 14 db power gain ? 69% typical drain effciency ? <0.3 db pulsed amplitude droop ? internally input and output matched typical performance over 1.2-1.4 ghz (t c = 25?c) of demonstration amplifer parameter 1.2 ghz 1.25 ghz 1.3 ghz 1.35 ghz 1.4 ghz units output power 900 900 870 870 920 w power gain 14.5 14.5 14.0 14.0 14.0 db drain effciency 68 67 67 63 62 % note: measured in the cghv14800-amp amplifer circuit, under 3 s pulse width, 3% duty cycle, p in = 45 dbm. package type: 440117 pn: cghv14800f subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 132 ma 25?c maximum dc current 1 i dcmax 24 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz cw thermal resistance, junction to case 3 r jc 0.44 ?c/w p diss = 398 w, 50?c pulsed thermal resistance, junction to case 3 r jc 0.10 ?c/w p diss = 664 w, 3 sec, 3%, 85?c case operating temperature 4 t c -40, +100 ?c p diss = 664 w, 100 sec, 10% note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at http://www.cree.com/rf/document-library 3 measured for the cghv14800f 4 see also, the power dissipation de-rating curve on page x electrical characteristics characteristics symbol min. typ. max. units conditions dc characteristics 1 (t c = 25 ? c) gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 83.6 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 500 ma saturated drain current 2 i ds 80.3 123.5 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 83.6 ma rf characteristics 3 (t c = 25 ? c, f 0 = 1.3 ghz unless otherwise noted) output power p out C 900 C w v dd = 50 v, i dq = 800 ma, p in = 45 dbm drain effciency d e C 68 C % v dd = 50 v, i dq = 800 ma, p in = 45 dbm power gain g p C 14.5 C db v dd = 50 v, i dq = 800 ma, p in = 45 dbm pulsed amplitude droop d C -0.3 C db v dd = 50 v, i dq = 800 ma output mismatch stress vswr C 5 : 1 C y no damage at all phase angles, v dd = 50 v, i dq = 800 ma , p in = 45 dbm pulsed dynamic characteristics input capacitance c gs C 326 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 643 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 3.9 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 measured in cghv14800-amp. pulse width = 3 s, duty cycle = 3%. cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical pulsed performance figure 1. - saturated output power and drain effciency vs frequency of the cghv14800f in the CGHV14800F-AMP v dd = 50 v, i dq = 800 ma, pulse width = 3 s, duty cycle = 3% figure 2. - small signal gain and return losses vs frequency of the cghv14800f in the CGHV14800F-AMP v dd = 50 v, i dq = 800 ma, pulse width = 100 s, duty cycle = 5% 70 80 90 59.5 60.0 60.5 d r a i n e ffi c i e n c y (% ) o u tp u t po w e r (d b m ) cghv14800f typical part performance 40 50 60 58.0 58.5 59.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) frequency (ghz) psat pout, pin=44dbm deff at psat deff, pin = 44dbm ? output power -5 0 5 12 16 20 s1 1 , s2 2 s2 1 small signal gain and return losses vs frequency for the cghv14800 -20 -15 -10 0 4 8 1.0 1.1 1.2 1.3 1.4 1.5 1.6 frequency s21 s11 s22 cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 CGHV14800F-AMP demonstration amplifer circuit bill of materials designator description qty r1 res, 5.1,ohm, +/- 1%, 0.25w, 1206 1 r2 res,1/16w,0603,1%,4.99k ohms 1 r3 res 536ohm +/- 1%, 0.25w,1206 1 l1 inductor,chip,6.8nh,0603 smt 1 c1, c14, c15 cap, 100 pf +/- 5%,, 250v, 0805, atc 600f 3 c16 cap, 2.0pf, +/-0.1pf, 0603, atc 1 c2 cap, 33pf, +/-5%, 0603, atc 1 c3, c8 cap, 470pf, 5%, 100v, 0603, x7r 2 c4, c9 cap,33000pf, 0805,100v, x7r 2 c5, c10 cap, 1.0uf, 100v, 10%, x7r, 1210 2 c6 cap 10uf 16v tantalum 1 c7 cap, 33 pf +/- 5%,, 250v, 0805, atc 600f 1 c11 cap, 3300 uf, +/-20%, 100v, electrolytic 1 c14 cap 10uf 16v tantalum 1 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post 2 j3 header rt>plz .1cen lk 9pos 1 j4 connector ; smb, straight, jack,smd 1 w1 cable ,18 awg, 4.2 1 pcb, tmm10i, 0.025 thk, cghv14800 1.2-1.4ghz 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 q1 cghv14800f 1 CGHV14800F-AMP demonstration amplifer circuit cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 cghv14800-amp demonstration amplifer circuit outline cghv14800-amp demonstration amplifer circuit schematic cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 product dimensions cghv14800f (package type 440117) cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 part number system parameter value units upper frequency 1 1.4 ghz power output 800 w type f = flanged p = package - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. type power output (w) upper frequency (ghz) cree gan high voltage product line cghv14800f cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 product ordering information order number description unit of measure image cghv14800f gan hemt each cghv14800-tb test board without gan hemt each CGHV14800F-AMP test board with gan hemt installed each cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv14800 rev 0.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
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